Wolfspeed Inc (Wolfspeed) designs, manufactures, and markets silicon carbide and GaN materials, power devices, and RF devices. The company also offers silicon carbide material products such as epitaxial wafers, silicon carbide bare wafers, and GaN epitaxial layers on silicon carbide wafers. Its products find application in radio-frequency (RF), power, and other applications. Wolfspeed’s RF devices include high-electron mobility transistors (HEMTs), monolithic microwave integrated circuits (MMICs), laterally diffused MOSFET (LDMOS) power transistors, and GaN-based die. The company also offers power device products such as metal oxide semiconductor field effect transistors (MOSFETs), silicon carbide Schottky diodes, power modules, and gate driver boards

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Wolfspeed is focusing on accelerating technological innovation in its products through various research and development initiatives. These initiatives include developing silicon carbide materials and fabrication technology for a 200mm platform, creating higher performance power devices, enhancing the quality, performance, and diameter of substrate and epitaxial materials, and continually improving manufacturing processes. The company also invests in developing supporting technologies for the expansion of the Mohawk Valley Fab. Wolfspeed operates three R&D centers. The company owns or is the exclusive licensee of 532 issued United States patents and approximately 993 foreign patents. Information about pipeline products and major technology alliances is not available in the input text. In FY2025, the company incurred expenses of US$175.1 million on R&D, which as a percentage of revenue, stood at 23%.